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Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
* Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Low thermal resistance
PBYR30100WT series
SYMBOL
QUICK REFERENCE DATA VR = 60 V/ 80 V/ 100 V IO(AV) = 30 A VF 0.7 V SOT429 (TO247)
DESCRIPTION
a1 1 k2
a2 3
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR30100WT series is supplied in the conventional leaded SOT429 (TO247) package.
PINNING
PIN 1 2 3 anode 1 cathode anode 2
mounting cathode base
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature CONDITIONS PBYR30 Tmb 139 C square wave; = 0.5; Tmb 124 C square wave; = 0.5; Tmb 124 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 60WT 60 60 60 MAX. 80WT 80 80 80 30 30 180 200 1 150 175 100WT 100 100 100 UNIT V V V A A A A A C C
IRRM Tj Tstg
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air MIN. TYP. MAX. UNIT 45 1.4 1 K/W K/W K/W
November 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 15 A; Tj = 125C IF = 30 A; Tj = 125C IF = 15 A VR = VRWM VR = VRWM; Tj = 125C VR = 5 V; f = 1 MHz, Tj = 25C to 125C
PBYR30100WT series
MIN. -
TYP. MAX. UNIT 0.61 0.74 0.77 5 5 600 0.7 0.85 0.85 150 15 V V V A mA pF
November 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYR30100WT series
20
PF / W
Vo = 0.550 V Rs = 0.010 Ohms
PBYR30100PT
Tmb(max) / C D = 1.0
122
100
IR/ mA
PBYR30100PT
Tj/ C = 150
15 0.5 10 0.2 0.1
I tp D= tp T t
129
10 125
136
1
100
75
5
T
143
0.1 50
0 0
10 IF(AV) / A
20
150 26
0.01 10 20 30 40 50 60 VR/ V 70 80 90 100
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
PBYR30100
Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj
15
PF / W
Vo = 0.550 V Rs = 0.010 Ohms
Tmb(max) / C
Cd/ pF
129
10000
PBYR30100PT
a = 1.57 1.9 10 4 2.2 2.8 136
1000
5
143
100
0 0
5 IF(AV) / A
10
150 15
10 1 10 VR/ V 100
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
IF / A 100 Tj = 25 C 80 Tj = 125 C Typ 60 Max PBYR30100PT
Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C.
10
Transient thermal impedance, Zth j-mb (K/W)
1
0.1
40
0.01
P D tp D= tp T t
20
T
0 0 0.5 1 VF / V 1.5 2
0.001 1us
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR30100WT
Fig.3. Typical and maximum forward characteristic per diode; IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp).
November 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8
PBYR30100WT series
o 3.5 max
2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M
15.5 min
Fig.7. SOT429 (TO247); pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8".
November 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PBYR30100WT series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1998
5
Rev 1.300

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